PART |
Description |
Maker |
K6R4016C1D-TL0810 K6R4008C1D-TI10 K6R4016C1D-EC081 |
1Mx4 Bit High Speed Static RAM(5.0V Operating)
|
Samsung semiconductor
|
K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作
|
Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32 65536-word x 8-bit High Speed CMOS Static RAM 65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256K X 4 STANDARD SRAM, 8 ns, PDSO32 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的)在商业和工业温度范围操作 TV 23C 21#20 2#16 SKT PLUG REC 64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8 VALVE SHUT OFF 1/8 阀门关闭了1 / 8 VALVE STARTUP 1/2 阀门启 / 2 VALVE SHUT OFF 1/4 阀门关闭了1 / 4 VALVE SHUT OFF 3/4 VALVE STARTUP 1/4 IC SRAM 512KX36 2.5V SYN 100TQFP VALVE SHUT OFF 1/2 BRACKET T 1-Mbit (128K x 8) Static RAM IC MCU 8K FULL SPEED USB 28SDIP BRACKET L 1M/512K FAST ASYNC SRAM 5V, 3.3V, ISR High-Performance CPLDs 256K (32K x 8) Static RAM -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash SPACER EZ-USB FX2LP USB Microcontroller High-Speed USB Peripheral Controller 1-Mbit (64K x 16) Static RAM 2M x 8 Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture BRANCH UNIT
|
AMIC Technology, Corp. Vishay Intertechnology, Inc. NXP Semiconductors N.V. Harwin PLC
|
IDT7052 IDT7052S IDT7052L IDT7052S_L 7052_DS_13624 |
2K x 8 FourPortTM RAM HIGH-SPEED 2K X 8 FOURPORT STATIC RAM HIGH-SPEED 2K x 8 FourPortTM STATIC RAM From old datasheet system
|
IDT Integrated Device Technology, Inc.
|
CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY Vishay Intertechnology, Inc.
|
IS61C512 IS61C512-15J IS61C512-15JI IS61C512-15NI |
ASYNCHRONOUS STATIC RAM 64K X 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
KM6161002A KM6161002AJ-15 |
64Kx16 Bit High Speed Static RAM
|
SAMSUNG
|
KM684002AE |
512Kx8 Bit High Speed Static RAM
|
Samsung
|